semihow rev.a0,july 2011 ksd13003er/KSU13003ER ksd13003er KSU13003ER
semihow rev.a0,july 2011 ksd13003er/KSU13003ER high voltage switch mode application ? high voltage, high speed switching ? suitable for switching regulator, inverters motor controls ? 150 max. operating temperature ? 8kv esd proof at hbm (c=100 ? , r=1.5 ? ) ksd13003er/KSU13003ER characteristics symbol rating unit collector - base voltage collector - emitter voltage emitter - base voltage collector current(dc) collector current(pulse) base current collector dissipation( tc =25 ) storage temperature max. operating junction temperature v cbo v ceo v ebo i c i cp i b p c t stg t j 700 400 9 1.5 3 0.75 25 - 65~150 150 v v v a a a w 1.5 amperes npn silicon power transistor 25 watts absolute maximum ratings tc=25 unless otherwise noted characteristics symbol test condition min typ. max unit collector - base breakdown voltage v cbo i c =500 a, i e =0 700 v collector - emitter breakdown voltage v ceo i c =1ma, i b =0 400 v emitter cut - off current i ebo v eb =9v,i c =0 10 ? *dc current gain h fe1 h fe2 v ce =10v,i c =400ma v ce =10v,i c =1.5a 9 3 38 *collector - emitter saturation voltage v ce (sat) i c =0.5a,i b =0.1a i c =1a,i b =0.25a i c =1.5a,i b =0.5a 0.5 1.0 3.0 v v v *base - emitter saturation voltage v be (sat) i c =0.5a,i b =0.1a i c =1a,i b =0.25a 1.0 1.2 v v output capacitance c ob v cb =10v, f=0.1mhz 21 ? current gain bandwidth product f t v ce =10v,i c =0.1a 4 ? turn on time t on vcc =125v, ic =2a i b 1 =0.2a, i b2 = - 0.2a r l =125 1.1 ? storage time t stg 4.0 ? fall time t f 0.7 ? electrical characteristics tc=25 unless otherwise noted * pulse test: pulse width 300s, duty cycle2% to- 252 / to -251 1. emitter 2. collector 3 . base hfe1 classification r 15 ~ 25 o 20 ~ 30 y 25 ~ 35 note. s er 1 3 0 0 3 yww z s semihow symbol yww y; year code, ww; week code z hfe1 classification package mark information. d - pak i - pak 2 1 2 3 1 3 ksd13003er KSU13003ER
semihow rev.a0,july 2011 ksd13003er/KSU13003ER h fe , dc current gain [a] i c , collector current [a] i c , collector current [a] c ob , capacitance [pf] v cb , collector - base voltage [v] v be (sat), v ce (sat), saturation voltage [v] figure 1. dc current gain figure 2. base - emitter saturation voltage collector - emitter saturation voltage figure 3. forward biased safe operating area typical characteristics p c , collector power dissipation [w] t c , case temperature [ ] figure 4. power derating 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30
semihow rev.a0,july 2011 ksd13003er/KSU13003ER package dimension 5.35 0.15 6.6 0.2 5.6 0.2 0.6 0.2 0.8 0.2 2.3typ 2.3typ 2.7 0.3 9.7 +0.5 -0.3 0.05 +0.1 -0.05 0.5 +0.1 -0.05 0.5 0.05 2.3 0.1 1.2 0.3 1.2 0.3 1 0.2 to - 252
semihow rev.a0,july 2011 ksd13003er/KSU13003ER package dimension 5.35 0.15 6.6 0.2 0.75 0.15 2.3typ 2.3typ 5.6 0.2 7 0.2 7.5 0.3 0.6 0.1 2.3 0.1 0.5 0.05 1.2 0.3 0.5 +0.1 -0.05 0.8 0.15 to - 251 7.8 0.4
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